BT152-500RT,127 NXP Semiconductors, BT152-500RT,127 Datasheet - Page 6

• Manufacturer Part Number: BT152-500RT,127
• Description: THYRISTOR 20A 500V SO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BT152-500RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 13A
• Current - On State (it (rms)) (max): 20A
• Current - Gate Trigger (igt) (max): 32mA
• Current - Hold (ih) (max): 60mA
• Current - Off State (max): 1mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A, 220A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 20A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.2 mA
• On-state Rms Current (it Rms): 20 A
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 0.6 V
• Gate Trigger Current (igt): 3 mA
• Holding Current (ih Max): 60 mA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063461127

NXP Semiconductors
Table 6.
BT152-500RT_1
Product data sheet
Symbol
Dynamic charateristics
dV
t
t
gt
q
Fig 7.
Fig 9.
D
I
/dt
dV
(V/ s)
L(25 C)
I
D
L
10
10
10
/dt
10
3
2
1
0
4
3
2
function of junction temperature; typical values
junction temperature
Critical rate of rise of off-state voltage as a
Normalized latching current as a function of
0
50
Characteristics
Parameter
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
(2)
(1)
0
50
…continued
50
100
Conditions
V
circuit; see
I
dI
V
V
dV
TM
DM
DM
R
100
G
D
/dt = 5 A/µs
= 25 V; (dI
= 40 A; V
T
/dt = 50 V/µs; R
= 335 V; T
= 335 V; T
j
003aad210
003aab825
T
( C)
j
( C)
Figure 7
150
150
D
Rev. 01 — 12 May 2009
T
/dt)
= 500 V; I
j
j
= 125 °C; gate open
= 125 °C; I
M
GK
= 30 A/µs;
= 100 Ω
G
Fig 8.
Fig 10. Normalized holding current as a function of
= 100 mA;
TM
I
GT(25 C)
I
H(25 C)
I
= 20 A;
GT
I
H
3
2
1
0
3
2
1
0
junction temperature
junction temperature
Normalized gate trigger current as a function of
50
50
0
0
SCR, 20 A, 32 mA, 500 V, SOT78
Min
200
-
-
50
50
BT152-500RT
Typ
300
2
70
100
100
© NXP B.V. 2009. All rights reserved.
003aab824
T
003aad211
T
j
j
Max
-
-
-
( C)
( C)
150
150
Unit
V/µs
µs
µs
6 of 11