BT151-650R,127 NXP Semiconductors, BT151-650R,127 Datasheet - Page 3

• Manufacturer Part Number: BT151-650R,127
• Description: THYRISTOR 12A 650V TO220AB
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of BT151-650R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 650V
• Off-state Voltage: 650V
• Average On-state Current: 7.5A
• Hold Current: 20mA
• Gate Trigger Current (max): 15mA
• Gate Trigger Voltage (max): 1.5V
• Peak Reverse Gate Voltage: 5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 132A
• On State Voltage(max): 1.75@23AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3674-5; 933387730127; BT151-650R

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT151-650R_5
Product data sheet
Symbol
V
V
I
I
dI
I
P
T
T
I
I
P
V
T(AV)
T(RMS)
GM
TSM
2
Fig 1.
stg
j
DRM
RRM
GM
G(AV)
RGM
t
T
/dt
I
T(RMS)
(A)
25
20
15
10
5
0
10
duration; maximum values
RMS on-state current as a function of surge
2
Limiting values
rate of rise of on-state
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
I2t for fusing
average gate power
peak reverse gate
voltage
10
1
1
surge duration (s)
Conditions
half sine wave; T
half sine wave; T
Figure 2
I
half sine wave; t
half sine wave; t
Figure
t
over any 20 ms period
T
p
= 10 ms; sine-wave pulse
= 20 A; I
001aaa954
4; see
G
Rev. 05 — 27 February 2009
10
= 50 mA; dI
Figure 5
p
p
mb
mb
= 8.3 ms; T
= 10 ms; T
≤ 109 °C; see
≤ 109 °C; see
G
/dt = 50 mA/µs
Fig 2.
I
j(init)
T(RMS)
j(init)
(A)
16
12
= 25 °C; see
8
4
0
= 25 °C
RMS on-state current as a function of mounting
base temperature; maximum values
Figure 3
Figure
50
1; see
0
SCR, 12 A, 15mA, 650 V, SOT78
50
BT151-650R
Min
-
-
-
-
-
-
-
-40
-
-
-
-
-
-
100
© NXP B.V. 2009. All rights reserved.
T
001aaa999
mb
Max
650
650
7.5
12
50
2
5
150
125
132
120
72
0.5
5
( C)
150
Unit
V
V
A
A
A/µs
A
W
°C
°C
A
A
A
W
V
2
3 of 11
s