BT151-650R,127 NXP Semiconductors, BT151-650R,127 Datasheet - Page 6

• Manufacturer Part Number: BT151-650R,127
• Description: THYRISTOR 12A 650V TO220AB
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of BT151-650R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 650V
• Off-state Voltage: 650V
• Average On-state Current: 7.5A
• Hold Current: 20mA
• Gate Trigger Current (max): 15mA
• Gate Trigger Voltage (max): 1.5V
• Peak Reverse Gate Voltage: 5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 132A
• On State Voltage(max): 1.75@23AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3674-5; 933387730127; BT151-650R

NXP Semiconductors
6. Characteristics
Table 6.
BT151-650R_5
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
Fig 7.
T
GT
D
/dt
dV
(V/ s)
D
10
10
10
/dt
10
4
3
2
function of junction temperature; minimum
values
Critical rate of rise of off-state voltage as a
0
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
(2)
(1)
50
100
Conditions
V
Figure 8
V
V
I
I
Figure 12
I
V
V
V
waveform; gate open circuit
V
exponential waveform; see
I
dI
V
V
dV
T
T
T
TM
D
D
D
D
R
DM
DM
DM
R
G
= 23 A; T
= 100 mA; V
= 100 mA; V
D
/dt = 5 A/µs; T
= 12 V; T
= 12 V; T
= 12 V; T
= 650 V; T
= 650 V; T
= 25 V; (dI
= 40 A; V
T
/dt = 50 V/µs; R
= 435 V; T
= 435 V; T
= 435 V; T
j
001aaa949
( C)
Rev. 05 — 27 February 2009
j
150
j
j
j
= 25 °C; see
D
= 25 °C; I
= 25 °C; see
= 25 °C; see
j
j
T
D
D
= 125 °C
= 125 °C
/dt)
= 650 V; I
j
j
j
= 125 °C; exponential
= 125 °C; R
= 125 °C; I
= 12 V; T
= 650 V; T
j
M
= 25 °C
GK
= 30 A/µs;
= 100 Ω
T
= 100 mA; see
G
Figure 11
Fig 8.
j
= 100 mA;
Figure 9
Figure 10
= 25 °C; see
TM
j
I
Figure 7
GT(25 C)
GK
= 125 °C
I
= 20 A;
GT
= 100 Ω;
3
2
1
0
junction temperature
Normalized gate trigger current as a function of
50
0
SCR, 12 A, 15mA, 650 V, SOT78
Min
-
-
-
-
-
0.25
-
-
50
200
-
-
50
BT151-650R
Typ
2
10
7
1.4
0.6
0.4
0.1
0.1
130
1000
2
70
100
© NXP B.V. 2009. All rights reserved.
001aaa952
T
j
Max
15
40
20
1.75
1.5
-
0.5
0.5
-
-
-
-
( C)
150
Unit
mA
mA
mA
V
V
V
mA
mA
V/µs
V/µs
µs
µs
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