UMX18NTN Rohm Semiconductor, UMX18NTN Datasheet
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Manufacturer Part Number
UMX18NTN
Description
TRANS COMPLEX DUAL NPN SOT-363
Manufacturer
Rohm Semiconductor
Specifications of UMX18NTN
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 10mA, 2V
Power - Max
150mW
Frequency - Transition
320MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Gain Bandwidth Ft Typ
320MHz
Power Dissipation Pd
150mW
Dc Collector Current
500mA
Transistor Case
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
500 mA
Maximum Dc Collector Current
1 A
Power Dissipation
150 mW
Maximum Operating Frequency
320 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
270
Gain Bandwidth Product Ft
320 MHz
Dc Current Gain Hfe
270
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
UMX18NTN
Available stocks
Transistors
General purpose transistors
(dual transistors)
EMX18 / UMX18N
1) Two 2SC5585 chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
∗
Power dissipation
Junction temperature
Storage temperature
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta=25°C)
1 120mW per element must not be exceeded.
mounting machines.
interference.
EMX18 / UMX18N
Tr
2
(3)
(4)
Parameter
(5)
(2)
Tr
(1)
(6)
1
Symbol
V
V
V
Tstg
Pd
I
Tj
CBO
CEO
EBO
I
CP
C
150 (TOTAL)
−55 to +150
Limits
500
150
1.0
1
15
12
6
and Tr
2.
Unit
mW
mA
˚C
˚C
V
V
V
A
∗
1
External dimensions (Unit : mm)
EMX18
ROHM : EMT6
UMX18N
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X18
0.1Min.
Abbreviated symbol : X18
( 4 )
( 5 )
( 6 )
1.25
1.2
1.6
2.1
Each lead has same dimensions
EMX18 / UMX18N
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Rev.A
1/3
Related parts for UMX18NTN
UMX18NTN Summary of contents
Transistors General purpose transistors (dual transistors) EMX18 / UMX18N Features 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost ...
Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Packaging specifications Package Code T2R Basic ordering 8000 Type ...
Transistors 1000 Ta = 25°C 500 200 100 100 200 500 1000 COLLECTOR CURRENT : I (mA) C Fig.4 Collector-emitter ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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