UMX18NTN Rohm Semiconductor, UMX18NTN Datasheet - Page 2

• Manufacturer Part Number: UMX18NTN
• Description: TRANS COMPLEX DUAL NPN SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMX18NTN

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 200mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 10mA, 2V
• Power - Max: 150mW
• Frequency - Transition: 320MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Gain Bandwidth Ft Typ: 320MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 500mA
• Transistor Case: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 500 mA
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 320 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 270
• Gain Bandwidth Product Ft: 320 MHz
• Dc Current Gain Hfe: 270
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMX18NTN; UMX18NTNTR

Transistors
Type
EMX18
UMX18N
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta=25°C)
Packaging specifications
Electrical characteristic curves
1000
500
200
100
50
20
10
5
2
1
0
Fig.1 Grounded emitter propagation
BASE TO EMITTER VOLTAGE : V
characteristics
Parameter
Package
Code
Basic ordering
unit (pieces)
0.5
1.0
V
CE
BE
= 2V
(V)
8000
T2R
1.5
Symbol
BV
BV
BV
V
Cob
I
I
h
CE (sat)
CBO
EBO
f
Taping
FE
CBO
CEO
EBO
T
1000
500
200
100
50
20
10
Min.
5
2
1
270
3000
15
12
1
TN
6
−
−
−
−
−
Fig.2 DC current gain vs.
2
COLLECTOR CURRENT : I
Typ. Max. Unit
320
7.5
90
−
−
−
−
−
−
collector current
5
10
250
680
Ta = 125°C
0.1
0.1
−
−
−
−
−
20
-40°C
25°C
MHz
mV
PF
50 100 200
µA
µA
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
C
E
C
V
=1 0µA
= 1mA
=1 0µA
CB
EB
/I
CE
CE
CB
(mA)
CE
B
=15 V
=6 V
=2 V, I
= 2V, I
= 10V, I
=20 0mA/10mA
= 2V
500
1000
C
E
= 10mA
=− 10mA, f = 100MHz
E
= 0A, f = 1MHz
Conditions
Fig.3 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
5
2
1
1
EMX18 / UMX18N
2
Ta = 125°C
COLLECTOR CURRENT : I
-40°C
5
vs. collector current ( Ι )
25°C
10 20
Rev.A
50 100 200
I
C
C
/I
(mA)
B
= 20
500 1000
2/3