PBSS4240DPN,115 NXP Semiconductors, PBSS4240DPN,115 Datasheet
PBSS4240DPN,115
Specifications of PBSS4240DPN,115
934057314115
PBSS4240DPN T/R
PBSS4240DPN T/R
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PBSS4240DPN,115 Summary of contents
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DATA SHEET dbook, halfpage PBSS4240DPN 40 V low V transistor Product data sheet DISCRETE SEMICONDUCTORS M3D302 NPN/PNP CEsat 2003 Feb 20 ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High collector current gain h FE • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor unless otherwise specified; for the PNP transistor with negative polarity V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified; for the PNP transistor with negative polarity I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 800 handbook, halfpage h FE (1) 600 (2) 400 (3) 200 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV) ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 2 (1) handbook, halfpage I C (2) (A) (3) 1.6 1.2 0.8 0 0.4 0 °C. TR1 (NPN); T amb ( mA mA mA mA Fig.6 Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 MHC475 handbook, halfpage (4) (5) (6) (7) (8) (9) (10) 1 ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 −1 −10 −1 −10 −10 = −5 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.8 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat −1.2 handbook, halfpage I C (4) (A) −0.8 −0.4 0 −0.4 −0.8 −1 °C. TR2 (PNP); T amb = −7 mA. = −4.2 mA. ( −6.3 mA. = −3.5 mA. ( −5.6 mA. = −2.8 mA. ( −4.9 mA. = −2.1 mA. ( Fig.12 Collector current as a function of collector-emitter voltage; typical values. ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 3 10 handbook, halfpage R CEsat (Ω (1) 1 (3) −1 10 −1 −10 −1 −10 −10 TR2 (PNP 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2003 Feb scale 3.1 1.7 3.0 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...