MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet
MBT6429DW1T1G
Manufacturer Part Number
MBT6429DW1T1G
Description
TRANS DUAL NPN 200MA 40V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MBT6429DW1T1G.pdf
(5 pages)
Specifications of MBT6429DW1T1G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 100µA, 5V
Power - Max
150mW
Frequency - Transition
700MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
700 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
500 at 0.01 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MBT6429DW1T1G
MBT6429DW1T1GOSTR
MBT6429DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
900
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON
Quantity:
30 000
MBT6429DW1T1G
Amplifier Transistors
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
recommended foot print.
T
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
, T
EBO
I
qJA
C
D
stg
−55 to +150
Value
Max
200
150
833
6.0
45
55
1
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
†For information on tape and reel specifications,
MBT6429DW1T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1T
M
G
ORDERING INFORMATION
(3)
(4)
MARKING DIAGRAM
http://onsemi.com
1
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Pb−Free)
1T M G
Package
SC−88
(5)
G
Publication Order Number:
(2)
CASE 419B
(SOT−363)
SC−88
MBT6429DW1T1/D
Tape & Reel
Shipping
(1)
(6)
3000 /
†
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MBT6429DW1T1G Summary of contents
Page 1
... Max Unit 150 R 833 °C/W qJA −55 to +150 °C J stg MBT6429DW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com (3) (2) (1) (4) (5) (6) SC−88 (SOT−363) 1 ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 1.0 mAdc Collector −Base Breakdown Voltage (I = 0.1 mAdc Collector Cutoff Current ( Vdc) CE Collector ...
Page 3
BANDWIDTH = 1 ≈ 3 1.0 mA 7.0 5.0 300 mA 3 100 200 500 ...
Page 4
2.0 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 1 25°C J 0 0.4 0 ...
Page 5
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...