MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 2

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 1.0 mAdc, I
= 0.1 mAdc, I
= 0.01 mAdc, V
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 1.0 mAdc, V
= 5.0 Vdc, I
= 0.5 Vdc, I
= 30 Vdc)
= 30 Vdc, I
= 10 Vdc, I
B
E
E
B
E
C
C
CE
B
CE
CE
CE
CE
= 0.5 mAdc)
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
CE
= 0, f = 1.0 MHz)
= 5.0 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
I
CE(sat)
C
I
I
BE(on)
C
h
CBO
EBO
CES
f
obo
FE
ibo
T
0.56
Min
500
500
500
500
100
45
55
−
−
−
−
−
−
−
1250
Max
0.01
0.01
0.66
700
0.1
0.2
0.6
3.0
8.0
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
−