MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 3

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

300
200
100
7.0
5.0
3.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
5.0
3.0
30
20
10
10
70
50
30
20
10
10
10 20
10 20
R
BANDWIDTH = 1.0 Hz
1.0 mA
S
20
≈ 0
3.0 mA
50 100 200
50 100 200
50 100 200
I
Figure 2. Effects of Frequency
C
Figure 6. Total Noise Voltage
= 10 mA
R
Figure 4. Noise Current
S
300 mA
, SOURCE RESISTANCE (OHMS)
10 mA
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
300 mA
BANDWIDTH = 1.0 Hz
500 1 k 2 k
500 1 k 2 k
500 1 k 2 k
1.0 mA
3.0 mA
100 mA
R
S
≈ 0
I
C
BANDWIDTH = 1.0 Hz
30 mA
100 mA
= 10 mA
5 k 10 k 20 k 50 k 100 k
300 mA
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
1.0 mA
I
3.0 mA
C
= 10 mA
10 mA
NOISE CHARACTERISTICS
(V
CE
http://onsemi.com
100 Hz NOISE DATA
30 mA
NOISE VOLTAGE
= 5.0 Vdc, T
3
8.0
4.0
8.0
4.0
7.0
5.0
3.0
16
12
20
12
30
20
10
20
16
0
0
A
0.01 0.02
10
10 20
= 25°C)
BANDWIDTH = 1.0 Hz
20
BANDWIDTH = 1.0 Hz
Figure 3. Effects of Collector Current
R
50 100 200
Figure 5. Wideband Noise Figure
50 100 200
S
≈ 0
0.05 0.1
R
R
I
S
S
C
Figure 7. Noise Figure
, SOURCE RESISTANCE (OHMS)
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
500 1 k 2 k
500 1 k 2 k
0.2
= 10 mA
0.5
f = 10 Hz
10 mA
100 mA
10 kHz
1.0
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
3.0 mA
500 mA
1.0 mA
2.0
30 mA
300 mA
I
100 Hz
C
100 kHz
= 1.0 mA
100 mA
5.0
1.0 kHz
10 mA
10