DST847BPDP6 Diodes Inc, DST847BPDP6 Datasheet - Page 2

• Manufacturer Part Number: DST847BPDP6
• Description: TRANS ARRAY NPN/PNP 45V SOT963
• Manufacturer: Diodes Inc

Specifications of DST847BPDP6

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 175MHz, 340MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: DST847BPDP6DITR

Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes:
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
1,000
0.01
100
0.1
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
10
1
Fig. 2 Single Pulse Maximum Power Dissipation
0.00001
0.001
0.01
0.000001
0.1
t , PULSE DURATION TIME (s)
1
1
Characteristic
D = 0.05
D = 0.005
D = Single Pulse
D = 0.7
D = 0.02
D = 0.01
D = 0.5
D = 0.3
D = 0.1
Characteristic
0.001
@T
0.00001
A
= 25°C unless otherwise specified
0.1
0.0001
R
Duty Cycle, D = t /t
T - T = P * R
θJA
R
J
θ
Single Pulse
JA
(t) = r(t) *
A
10
= 370°C/W
0.001
R
θ
JA
θ
Fig. 1 Transient Thermal Response
1 2
JA
(t)
1,000
t , PULSE DURATION TIME (s)
1
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D = 0.9
0.01
2 of 8
Symbol
V
V
Symbol
T
V
J
CBO
CEO
EBO
0.1
I
R
, T
C
P
θ JA
D
STG
0.4
0.3
0.2
0.1
0
0
Fig. 3 Power Dissipation vs. Ambient Temperature
1
20
T , AMBIENT TEMPERATURE ( C)
A
40
Note 3
P(pk)
100 (-100)
-55 to +150
10
6.0(-5.0)
50(-50)
45(-45)
T - T = P * R
Duty Cycle, D = t /t
Value
R
Value
J
60
R
θJA
250
500
θ
JA
t
(t) = r(t) *
A
1
= 370°C/W
t
2
80
100
θ
R
JA
θ
1 2
100
JA
(t)
DST847BPDP6
120
1,000
°
140
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
V
January 2010
160