DST847BPDP6 Diodes Inc, DST847BPDP6 Datasheet - Page 4

• Manufacturer Part Number: DST847BPDP6
• Description: TRANS ARRAY NPN/PNP 45V SOT963
• Manufacturer: Diodes Inc

Specifications of DST847BPDP6

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 175MHz, 340MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: DST847BPDP6DITR

Typical Characteristics – Q1 NPN Transistor
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.0
0.8
0.6
0.4
0.2
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.1
0
0
I = 1.2mA
B
Fig. 6 Typical Collector-Emitter Saturation Voltage
Fig. 8 Typical Base-Emitter Turn-On Voltage
V , COLLECTOR-EMITTER VOLTAGE (V)
V
CE
CE
I /I = 10
C B
1
= 5V
T = -55°C
T = 25°C
I , COLLECTOR CURRENT (mA)
I = 1.4mA
T = 100°C
C
1
A
A
B
A
Fig. 4 Typical Collector Current
T = 150°C
I , COLLECTOR CURRENT (mA)
C
A
vs. Collector-Emitter Voltage
1
vs. Collector Current
vs. Collector Current
I = 1.6mA
B
2
T = 100°C
10
A
T = -55°C
I = 1.8mA
B
A
T = 150°C
10
3
A
T = 25°C
A
I = 2mA
I = 0.8mA
I = 0.6mA
I = 0.4mA
I = 0.2mA
I = 1mA
B
B
B
B
B
B
4
100
100
5
www.diodes.com
4 of 8
450
400
350
300
250
200
150
100
0.01
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
50
0.1
0
Fig. 5 Typical DC Current Gain vs. Collector Current
1
Fig. 7 Typical Collector-Emitter Saturation Voltage
Fig. 9 Typical Base-Emitter Saturation Voltage
I /I = 20
1
T = -55°C
C B
T = 25°C
1
T = 100°C
A
A
T = 150°C
T = -55°C
T = 25°C
A
I , COLLECTOR CURRENT (mA)
A
I , COLLECTOR CURRENT (mA)
A
C
A
T = 150°C
C
A
I , COLLECTOR CURRENT (mA)
1
C
vs. Collector Current
T = 100°C
T = 50°C
A
T = 20°C
vs. Collector Current
T = 10°C
A
A
A
10
10
T = 100°C
A
10
DST847BPDP6
V
CE
= 5V
© Diodes Incorporated
100
100
100
January 2010