DST847BPDP6 Diodes Inc, DST847BPDP6 Datasheet - Page 6

• Manufacturer Part Number: DST847BPDP6
• Description: TRANS ARRAY NPN/PNP 45V SOT963
• Manufacturer: Diodes Inc

Specifications of DST847BPDP6

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 175MHz, 340MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: DST847BPDP6DITR

Typical Characteristics – Q2 PNP Transistor
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
1.2
1.0
0.8
0.6
0.4
0.2
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.01
0.1
0
0.1
0
1
0
0.1
Fig. 14 Typical Base-Emitter Turn-On Voltage
Fig. 12 Typical Collector-Emitter Saturation Voltage
V
T = -55°C
T = 25°C
CE
A
A
T = 150°C
-V , COLLECTOR-EMITTER VOLTAGE (V)
I = -1.2mA
A
B
I /I = 10
= -5V
C B
CE
-I , COLLECTOR CURRENT (mA)
C
1
T = 125°C
Fig. 10 Typical Collector Current
I = -1.4mA
B
A
-I , COLLECTOR CURRENT (mA)
1
vs. Collector-Emitter Voltage
C
1
vs. Collector Current
T = 125°C
vs. Collector Current
A
T = 150°C
I = -1.6mA
A
B
2
10
T = -55°C
A
10
T = 85°C
I = -1.8mA
B
A
3
T = 25°C
A
T = 85°C
A
100
I = -2mA
B
100
4
I = -1mA
I = -0.8mA
I = -0.6mA
I = -0.4mA
I = -0.2mA
B
B
B
B
B
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100
1.2
1.0
0.8
0.6
0.4
0.2
0.01
10
0.1
0.1
0.1
Fig. 11 Typical DC Current Gain vs. Collector Current
1
0.1
T = 150°C
T = 85°C
T = 25°C
T = -55°C
Fig. 15 Typical Base-Emitter Saturation Voltage
T = -55°C
Fig. 13 Typical Collector-Emitter Saturation Voltage
T = 25°C
A
A
A
A
A
A
I /I = 20
C B
I
C B
/I
-I , COLLECTOR CURRENT (mA)
= 10
C
-I , COLLECTOR CURRENT (A)
T = 150°C
C
-I , COLLECTOR CURRENT (mA)
A
1
1
T = 125°C
C
A
1
vs. Collector Current
vs. Collector Current
T = 150°C
T = 125°C
A
A
T = 125°C
10
A
10
10
T = -55°C
A
T = 85°C
A
T = 25°C
DST847BPDP6
A
100
100
T = 85°C
100
V
A
CE
= 5V
© Diodes Incorporated
January 2010
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