PMBT3946YPN,115 NXP Semiconductors, PMBT3946YPN,115 Datasheet - Page 10

• Manufacturer Part Number: PMBT3946YPN,115
• Description: TRANS NPN/PNP 40V 200MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PMBT3946YPN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 350mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN, PNP
• Frequency - Transition: 300MHz, 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061453115

NXP Semiconductors
8. Test information
PMBT3946YPN_1
Product data sheet
Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current;
Fig 13. TR1 (NPN): Test circuit for switching times
(1) T
(2) T
(3) T
I
typical values
C
amb
amb
amb
/I
B
= 10
= 150 C
= 25 C
= 55 C
oscilloscope
V
CEsat
(V)
10
10
V
Rev. 01 — 12 May 2009
I
1
1
2
10
(probe)
40 V, 200 mA NPN/PNP general-purpose double transistor
450
1
R1
1
(1)
(2)
(3)
R2
R
B
V
BB
10
R
C
V
CC
DUT
V
10
o
2
mlb826
I
006aab122
C
(probe)
PMBT3946YPN
(mA)
450
10
oscilloscope
3
© NXP B.V. 2009. All rights reserved.
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