PMBT3946YPN,115 NXP Semiconductors, PMBT3946YPN,115 Datasheet - Page 7

• Manufacturer Part Number: PMBT3946YPN,115
• Description: TRANS NPN/PNP 40V 200MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PMBT3946YPN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 350mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN, PNP
• Frequency - Transition: 300MHz, 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061453115

NXP Semiconductors
PMBT3946YPN_1
Product data sheet
Fig 3.
Fig 5.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
600
400
200
1.2
0.8
0.4
0
0
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 1 V
= 1 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aab115
006aab117
C
C
(mA)
(mA)
10
10
Rev. 01 — 12 May 2009
3
3
40 V, 200 mA NPN/PNP general-purpose double transistor
Fig 4.
Fig 6.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
0.0
1.3
0.9
0.5
0.1
10
0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
C
amb
amb
amb
amb
1
/I
B
= 10
= 25 C
= 55 C
= 25 C
= 150 C
2
1
(1)
(2)
(3)
PMBT3946YPN
4
I
B
10
(mA) = 5.0
6
4.0
3.0
1.0
2.0
10
© NXP B.V. 2009. All rights reserved.
2
8
I
006aab116
006aab118
C
4.5
3.5
2.5
1.5
0.5
V
CE
(mA)
(V)
10
10
3
7 of 15