BC846S,115 NXP Semiconductors, BC846S,115 Datasheet - Page 4

• Manufacturer Part Number: BC846S,115
• Description: TRANSISTOR NPN 65V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC846S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055429115; BC846S T/R; BC846S T/R

NXP Semiconductors
1999 Sep 01
handbook, halfpage
handbook, full pagewidth
NPN general purpose double transistor
V CEsat
I
(1) T
(2) T
(3) T
Fig.2
V
(1) T
C
(mV)
CE
/I
B
h FE
400
300
200
100
10
10
= 5 V.
= 20.
10
amb
amb
amb
amb
10
0
3
2
10
−1
−1
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
(1)
(2)
(3)
(2) T
(3) T
Fig.4 DC current gain as a function of collector current; typical values.
amb
amb
10
= 25 °C.
= −55 °C.
1
10
(1)
(2)
(3)
2
I C (mA)
MGL738
10
3
4
10
handbook, halfpage
V
(1) T
(2) T
(3) T
Fig.3
(mV)
V BE
CE
1200
1000
800
600
400
200
= 5 V.
amb
amb
amb
10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
1
10
2
10
(1)
(2)
(3)
I C (mA)
10
Product data sheet
2
I C (mA)
BC846S
MGL739
MGL740
10
10
3
3