PUMZ2,115 NXP Semiconductors, PUMZ2,115 Datasheet - Page 3

• Manufacturer Part Number: PUMZ2,115
• Description: TRANS NPN/PNP 50V 150MA SOT457
• Manufacturer: NXP Semiconductors

Specifications of PUMZ2,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz, 190MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz at NPN, 190 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058172115; PUMZ2 T/R; PUMZ2 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PIMZ2_PUMZ2_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
Symbol
Per transistor
R
Per device
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
th(j-a)
th(j-a)
Device mounted on an FR4 printed-circuit board.
Device mounted on an FR4 printed-circuit board.
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
total power dissipation
SOT457
SOT363
SOT457
SOT363
SOT457
SOT363
SOT457
SOT363
Rev. 06 — 17 November 2009
Conditions
open emitter
open base
open collector
T
T
Conditions
T
T
amb
amb
amb
amb
NPN/PNP general-purpose double transistors
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1]
[1]
[1]
[1]
PIMZ2; PUMZ2
[1]
[1]
[1]
[1]
-
-
-
-
Min
-
-
-
-
-
−65
−65
-
-
Min
-
-
-
-
Typ
-
-
-
-
Max
60
50
7
150
200
100
200
180
+150
150
+150
300
300
© NXP B.V. 2009. All rights reserved.
Max
625
694
417
417
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
mW
mW
Unit
K/W
K/W
K/W
K/W
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