BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 5

TRANS NPN/NPN GP 45V 6TSOP

BC847DS,115

Manufacturer Part Number
BC847DS,115
Description
TRANS NPN/NPN GP 45V 6TSOP
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BC847DS,115

Package / Case
SC-74-6
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
110
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934063469115
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC847_BC547_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
SOT416
SOT883
SOT54
SOT23
SOT323
SOT416
SOT883
SOT54
Rev. 07 — 10 December 2008
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
Conditions
in free air
p
p
amb
45 V, 100 mA NPN general-purpose transistors
1 ms
1 ms
25 C
BC847/BC547 series
[2][3]
[1]
[1]
[1]
[1]
[2][3]
Min
-
-
-
-
-
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
50
45
6
100
200
100
250
200
150
250
500
150
+150
+150
Max
500
625
833
500
250
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
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