BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 6

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
7. Characteristics
BC847_BC547_SER_7
Product data sheet
Table 8.
T
[1]
[2]
Symbol Parameter
I
I
h
V
V
V
C
C
f
NF
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
V
= 25 C unless otherwise specified.
BE
decreases by approximately 2 mV/K with increasing temperature.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
collector capacitance I
emitter capacitance
transition frequency
noise figure
Characteristics
h
h
h
h
h
h
FE
FE
FE
FE
FE
FE
p
group A
group B
group C
group A
group B
group C
300 s;
Rev. 07 — 10 December 2008
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
V
I
I
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
E
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
S
= 150 C
= i
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 A; V
= 2 k ; f = 1 kHz;
= 5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
e
c
= 0 A; V
= 0 A; V
45 V, 100 mA NPN general-purpose transistors
C
C
C
C
C
C
C
C
CE
E
E
B
B
= 0 A
= 10 A
= 10 A
= 10 A
= 2 mA
= 2 mA
= 2 mA
= 2 mA
CE
CE
B
B
CE
= 0.5 mA
= 0.5 mA
CB
EB
= 0 A
= 0 A;
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V;
= 0.5 V;
= 5 V;
BC847/BC547 series
= 10 V;
[1]
[2]
[2]
[2]
Min
-
-
-
-
-
-
110
110
200
420
-
-
-
-
580
-
-
-
100
-
Typ
-
-
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
11
-
2
© NXP B.V. 2008. All rights reserved.
Max
15
5
100
-
-
-
800
220
450
800
200
400
-
-
700
770
1.5
-
-
10
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
A
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