PEMZ1,115 NXP Semiconductors, PEMZ1,115 Datasheet - Page 5

• Manufacturer Part Number: PEMZ1,115
• Description: TRANS NPN/PNP 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMZ1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056705115; PEMZ1 T/R; PEMZ1 T/R

NXP Semiconductors
PACKAGE OUTLINE
2001 Nov 07
Plastic surface mounted package; 6 leads
NPN/PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
EIAJ
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
L p
Product data sheet
c
X
ISSUE DATE
01-01-04
01-08-27
PEMZ1
SOT666