BCM856BS,115 NXP Semiconductors, BCM856BS,115 Datasheet - Page 4

• Manufacturer Part Number: BCM856BS,115
• Description: TRANS PNP DBL 65V 100MA SOT-363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCM856BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 175MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062056115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BCM856BS_BCM856DS_1
Product data sheet
Table 7.
[1]
Table 8.
T
Symbol Parameter
Per transistor
R
Per device
R
Symbol
Per transistor
I
I
h
V
V
CBO
EBO
amb
FE
CEsat
BEsat
th(j-a)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25 C unless otherwise specified.
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
Thermal characteristics
Characteristics
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
Rev. 01 — 7 August 2008
Conditions
V
I
V
I
T
V
I
V
I
V
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
B
C
B
C
B
C
B
j
CB
CB
EB
CE
CE
BCM856BS; BCM856DS
= 0 A
= 0 A;
= 150 C
= 0.5 mA
= 5 mA
= 0.5 mA
= 5 mA
= 0 A
= 10 A
= 2 mA
= 10 mA;
= 100 mA;
= 10 mA;
= 100 mA;
= 5 V;
= 30 V;
= 30 V;
= 5 V;
= 5 V;
Conditions
in free air
in free air
PNP/PNP matched double transistors
[1]
[1]
Min
-
-
-
-
200
-
-
-
-
[1]
[1]
[1]
[1]
Min
-
-
-
-
Typ
-
-
-
250
290
50
200
760
920
Typ
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
-
450
-
-
15
5
100
200
400
Max
625
500
416
328
Unit
nA
nA
mV
mV
mV
mV
Unit
K/W
K/W
K/W
K/W
A
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