BCM856BS,115 NXP Semiconductors, BCM856BS,115 Datasheet - Page 7

• Manufacturer Part Number: BCM856BS,115
• Description: TRANS PNP DBL 65V 100MA SOT-363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCM856BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 175MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062056115

NXP Semiconductors
BCM856BS_BCM856DS_1
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
0.8
0.6
0.4
1
8
6
4
2
0
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa544
006aaa546
C
V
(mA)
CB
(V)
10
Rev. 01 — 7 August 2008
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
BCM856BS; BCM856DS
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
1
CE
= 5 V; T
PNP/PNP matched double transistors
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
V
© NXP B.V. 2008. All rights reserved.
EB
006aaa545
006aaa547
(V)
10
6
2
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