BCV64B,215 NXP Semiconductors, BCV64B,215 Datasheet - Page 3

• Manufacturer Part Number: BCV64B,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV64B,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V, 6V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V / 220 @ 2mA, 700mV
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V at TR1, 6 V at TR2
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz at TR1
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933835240215; BCV64B T/R; BCV64B T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BCV64B
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
Per transistor
V
I
I
I
Transistor TR1
V
V
Transistor TR2
V
V
Per device
P
T
T
T
Symbol
R
C
CM
B
j
amb
stg
EBO
CBO
CEO
CBO
CEO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB).
Device mounted on an FR4 PCB.
Parameter
emitter-base voltage
collector current
peak collector current
base current
collector-base voltage
collector-emitter voltage
collector-base voltage
collector-emitter voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
open collector
open emitter
open base
open emitter
open base
T
Conditions
Conditions
in free air
amb
≤ 25 °C
PNP general-purpose double transistor
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
−65
−65
Min
-
Typ
-
© NXP B.V. 2010. All rights reserved.
BCV64B
Max
−6
−100
−200
−100
−30
−30
−6
−6
250
150
+150
+150
Max
500
Unit
V
mA
mA
mA
V
V
V
V
mW
°C
°C
°C
Unit
K/W
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