BCV64B,215 NXP Semiconductors, BCV64B,215 Datasheet - Page 4

TRANS PNP 30V 100MA DUAL SOT143B

BCV64B,215

Manufacturer Part Number
BCV64B,215
Description
TRANS PNP 30V 100MA DUAL SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV64B,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V, 6V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V / 220 @ 2mA, 700mV
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V at TR1, 6 V at TR2
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz at TR1
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933835240215
BCV64B T/R
BCV64B T/R
NXP Semiconductors
7. Characteristics
BCV64B
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
Per transistor
I
V
V
Transistor TR1
h
V
V
V
f
C
Transistor TR2
h
V
V
CBO
T
j
FE
FE
CEsat
BEsat
CEsat
BEsat
BE
CEsat
BE
c
= 25
Due to matched dies, h
V
V
BEsat
BE
°
C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Parameter
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
Characteristics
All information provided in this document is subject to legal disclaimers.
FE
Rev. 4 — 2 August 2010
values for TR2 are the same as for TR1.
Conditions
V
V
T
I
I
I
I
V
I
I
I
I
I
I
V
I
V
V
I
f = 100 MHz
V
I
f = 1 MHz
V
I
I
I
I
V
C
B
C
B
C
C
B
C
B
C
C
C
E
C
C
B
C
j
CB
CB
CE
CE
CE
CE
CB
CE
CE
= 150 °C
= −0.5 mA
= −0.5 mA
= −5 mA
= −5 mA
= i
= −5 mA
= −10 mA;
= −10 mA;
= −2 mA
= −100 mA;
= −100 mA;
= −2 mA;
= −10 mA;
= −10 mA;
= −2 mA
= −100 mA;
= −2 mA;
= −30 V; I
= −30 V; I
= −5 V;
= −5 V
= −5 V
= −5 V;
= −10 V;
= −700 mV;
= −700 mV
e
= 0 A;
E
E
PNP general-purpose double transistor
= 0 A
= 0 A;
[2]
[2]
[3]
[3]
[1]
[3]
Min
-
-
-
-
220
-
-
−600
-
100
-
220
-
-
Typ
-
-
−75
−700
-
−250
−850
−650
-
-
4
-
−250
−700
© NXP B.V. 2010. All rights reserved.
BCV64B
Max
−15
−5
−300
-
475
−650
-
−750
−820
-
-
475
-
-
Unit
nA
μA
mV
mV
mV
mV
mV
mV
MHz
pF
mV
mV
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