TPC6701(TE85L,F) Toshiba, TPC6701(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPC6701(TE85L,F)
• Description: TRANS NPN DUAL 50V 1A VS6 2-3T1D
• Manufacturer: Toshiba

Specifications of TPC6701(TE85L,F)

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 170mV @ 6mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 100mA, 2V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1D
• Configuration: Dual
• Transistor Polarity: N-Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Details

0.003
0.03
0.01
0.3
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0.001
1
0
0
0
0
Common emitter
I C /I B = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
20
0.2
0.2
Collector-emitter voltage V
Base-emitter voltage V
Collector current I
0.01
0.4
0.4
Ta = 100°C
V
Ta = 100°C
15
CE (sat)
I
I
C
C
– V
– V
0.6
0.6
−55
CE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
BE
– I
C
C
0.8
0.1
0.8
25
BE
CE
(A)
(V)
25
−55
I B = 1 mA
(V)
1.0
1.0
10
8
6
4
2
0
1.2
1.2
1
3
5000
3000
1000
0.03
500
300
100
0.3
0.1
50
30
10
0.001
10
0.001
3
1
Common emitter
I C /I B = 50
Single nonrepetitive pulse
25
Collector current I
Collector current I
0.01
0.01
Ta = 100°C
V
Ta = 100°C
BE (sat)
h
−55
25
FE
−55
– I
Common emitter
V CE = 2 V
Single nonrepetitive pulse
C
– I
C
C
C
0.1
0.1
(A)
(A)
2004-07-07
TPC6701
1
1