TPC6701(TE85L,F) Toshiba, TPC6701(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPC6701(TE85L,F)
• Description: TRANS NPN DUAL 50V 1A VS6 2-3T1D
• Manufacturer: Toshiba

Specifications of TPC6701(TE85L,F)

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 170mV @ 6mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 100mA, 2V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1D
• Configuration: Dual
• Transistor Polarity: N-Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Details

0.001
0.01
0.1
10
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (continuous)
I C max (pulsed)*
Ta = 25°C
10 s*
2
Collector-emitter voltage V
DC operation
).
(Ta = 25°C)
1000
100
Safe Operating Area
10
0.001
1
1
100 ms*
10 ms*
1 ms*
0.01
10
CE
100 µs*
Transient Thermal Resistance r
(V)
10 µs*
0.1
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
mm
100
2
)
Pulse width t
1
4
w
(s)
0.5
0.4
0.3
0.2
0.1
0
0
10
DC operation
Ta = 25°C
Mounted on an FR4 board (glass epoxy,
1.6 mm thick, Cu area: 645 mm
th
Permissible power dissipation for Q1 P C (W)
– t
w
Permissible Power Dissipation for
0.1
Simultaneous Operation
100
0.2
2
)
0.3
1000
0.4
2004-07-07
TPC6701
0.5