MBT3904DW1T3G ON Semiconductor, MBT3904DW1T3G Datasheet - Page 3

• Manufacturer Part Number: MBT3904DW1T3G
• Description: TRANS GP DUAL 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT3904DW1T3G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

- 0.5 V
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
DUTY CYCLE = 2%
300 ns
Figure 1. Delay and Rise Time
Equivalent Test Circuit
+10.9 V
(V
(I
(V
(I
< 1 ns
C
B1
CC
CC
= 10 mAdc, I
= I
= 3.0 Vdc, V
= 3.0 Vdc, I
B2
10 k
= 1.0 mAdc)
Characteristic
B1
C
BE
= 1.0 mAdc)
= 10 mAdc)
= − 0.5 Vdc)
+3 V
* Total shunt capacitance of test jig and connectors
275
C
s
http://onsemi.com
< 4 pF*
DUTY CYCLE = 2%
10 < t
1
3
< 500 ms
0
- 9.1 V′
t
1
Figure 2. Storage and Fall Time
+10.9 V
Equivalent Test Circuit
Symbol
< 1 ns
t
t
t
t
d
s
r
f
1N916
10 k
Min
−
−
−
−
Max
200
35
35
50
+3 V
275
C
s
Unit
ns
ns
< 4 pF*