MBT3904DW1T3G ON Semiconductor, MBT3904DW1T3G Datasheet - Page 6

• Manufacturer Part Number: MBT3904DW1T3G
• Description: TRANS GP DUAL 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT3904DW1T3G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
T
J
= 25°C
2.0
0.2
0.02
I
Figure 17. “ON” Voltages
C
I
C
= 1.0 mA
5.0
, COLLECTOR CURRENT (mA)
0.3
0.03
10
0.5
V
0.05
CE(sat)
20
0.7
V
@ I
0.07
BE(sat)
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
B
Figure 16. Collector Saturation Region
V
T
0.1
=10
10 mA
@ I
BE
J
50
= +125°C
C
@ V
/I
B
Figure 15. DC Current Gain
=10
CE
100
2.0
- 55°C
+25°C
I
C
=1.0 V
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
6
0.3
5.0
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
30 mA
0
7.0
0
0.5
10
20
0.7
Figure 18. Temperature Coefficients
q
VB
40
FOR V
1.0
q
VC
I
C
20
, COLLECTOR CURRENT (mA)
60
FOR V
BE(sat)
80
30
CE(sat)
2.0
100
50
3.0
120
100 mA
70
+25°C TO +125°C
+25°C TO +125°C
- 55°C TO +25°C
- 55°C TO +25°C
140
V
5.0
100
CE
160
T
= 1.0 V
J
= 25°C
7.0
180
200
10
200