MBT3904DW1T3G ON Semiconductor, MBT3904DW1T3G Datasheet - Page 4

• Manufacturer Part Number: MBT3904DW1T3G
• Description: TRANS GP DUAL 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT3904DW1T3G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

7.0
5.0
3.0
2.0
1.0
500
300
200
100
500
300
200
100
10
70
50
30
20
10
70
50
30
20
10
7
5
7
5
0.1
1.0
1.0
I
C
/I
B
0.2 0.3 0.5 0.7
= 20
2.0 3.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
I
Figure 5. Turn −On Time
I
I
C
Figure 3. Capacitance
C
C
Figure 7. Storage Time
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
B
= 10
1.0
10
10
C
ibo
t
C
d
2.0 3.0 5.0 7.0 10
obo
@ V
20
OB
20
TYPICAL TRANSIENT CHARACTERISTICS
= 0 V
30
30
t
50
50
I
r
C
@ V
/I
t′
I
B
70
B1
70
s
= 20
I
I
C
CC
= t
C
= I
/I
/I
100
100
2.0 V
B
s
B
B2
20 30 40
= 3.0 V
-
= 10
http://onsemi.com
= 10
15 V
40 V
1
/
8
t
f
200
200
4
T
T
J
J
= 25°C
= 125°C
5000
3000
2000
1000
500
300
200
100
500
300
200
100
700
500
300
200
100
70
50
30
20
10
70
50
30
20
10
70
50
7
5
7
5
1.0
1.0
1.0
V
I
C
CC
/I
2.0 3.0
2.0 3.0
B
= 40 V
2.0 3.0
= 10
I
I
C
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
5.0 7.0
5.0 7.0
I
, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
C
5.0 7.0 10
Figure 8. Fall Time
/I
B
= 10
10
10
I
C
/I
B
20
20
20
= 20
Q
T
30
30
30
50
50
50 70 100
Q
V
I
V
I
70
70
B1
C
CC
A
CC
/I
B
= I
100
100
= 40 V
= 40 V
= 10
B2
200
200
200