UMD2NTR Rohm Semiconductor, UMD2NTR Datasheet - Page 2
![TRANS NPN/PNP 50V 30MA SOT-363](/photos/5/30/53027/sot-363_pkg_sml.jpg)
UMD2NTR
Manufacturer Part Number
UMD2NTR
Description
TRANS NPN/PNP 50V 30MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMD2NTR.pdf
(4 pages)
Specifications of UMD2NTR
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMD2NTR
Manufacturer:
SMD
Quantity:
5 200
Part Number:
UMD2NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
DTr
∗
Type
EMD2
UMD2N
IMD2A
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Fig.1 Input voltage vs. output current
Transition frequency of the device
500m
200m
100m
100
1
50
20
10
100µ 200µ 500µ 1m
5
2
1
(NPN)
(ON characteristics)
Parameter
OUTPUT CURRENT : I
Ta=−40˚C
Package
Code
Basic ordering
unit (pieces)
100˚C
25˚C
2m
5m 10m 20m 50m 100m
O
(A)
V
O
=0.2V
Symbol
R
V
V
V
I
R
O (off)
G
2
O (on)
f
8000
I
I (off)
I (on)
/R
T
T2R
I
1
I
1
Min.
15.4
0.8
56
Fig.2 Output current vs. input voltage
−
3
−
−
−
−
10m
500µ
200µ
100µ
50µ
20µ
10µ
5m
2m
1m
1µ
5µ
2µ
Taping
3000
0
TR
V
Ta=100˚C
CC
(OFF characteristics)
Typ.
=5V
250
0.5
−40˚C
0.1
22
25˚C
−
−
−
−
−
1
INPUT VOLTAGE : V
1.0
T108
3000
Max.
0.36
28.6
0.5
0.3
0.5
1.2
−
−
−
1.5
MHz
Unit
2.0
mA
µA
kΩ
I (off)
V
V
−
−
(V)
2.5
V
V
I
V
V
V
V
O
CE
CC
O
I
CC
O
= 10mA, I
= 5V
= 0.2V, I
= 5V, I
= 10V, I
3.0
= 5V, I
= 50V, V
EMD2 / UMD2N / IMD2A
O
O
E
= 5mA
O
= −5mA, f = 100MHz
= 100µA
I
Conditions
500
200
100
= 0.5mA
=5 mA
I
= 0V
50
20
10
1k
5
2
1
100µ 200µ
Fig.3 DC current gain vs. output
−
−
current
OUTPUT CURRENT : I
500µ 1m
Ta=100˚C
−40˚C
25˚C
Rev.C
2m
∗
5m 10m 20m 50m 100m
O
(A)
V
O
=5V
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