UMD2NTR Rohm Semiconductor, UMD2NTR Datasheet - Page 3

• Manufacturer Part Number: UMD2NTR
• Description: TRANS NPN/PNP 50V 30MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMD2NTR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
DTr
Fig.5 Input voltage vs. output current
−500m
−200m
−100m
−500m
−200m
−100m
500m
200m
100m
−100
−50m
−20m
−10m
−50
−20
−10
50m
20m
10m
−100µ
−5m
−2m
−1m
−2
−1
5m
2m
1m
2
−5
−100µ
−1
100µ 200µ
1
(PNP)
Fig.8 Output voltage vs. output
Fig.4 Output voltage vs. output
−200µ
(ON characteristics)
−200µ
Ta=−40˚C
OUTPUT CURRENT : I
−500µ
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
−500µ
100˚C
current
500µ 1m
25˚C
−1m
−1m
Ta=100˚C
Ta=100˚C
−2m
−2m
2m
−40˚C
−40˚C
25˚C
25˚C
−5m
−5m
5m 10m 20m 50m 100m
−10m
−10m
O
O
−20m
O
(A)
−20m
(A)
(A)
V
l
O
l
O
O
=−0.3V
/l
/l
−50m
I
I
=20
=20
−50m
−100m
−100m
Fig.6 Output current vs. input voltage
−500µ
−200µ
−100µ
−10m
−50µ
−20µ
−10µ
−5m
−2m
−1m
−5µ
−2µ
−1µ
0
V
Ta=100˚C
CC
(OFF characteristics)
=−5V
−0.5
−40˚C
25˚C
INPUT VOLTAGE : V
−1
−1.5
−2
I (off)
(V)
−2.5
−3
EMD2 / UMD2N / IMD2A
500
200
100
10
50
20
1k
−100µ
5
2
1
Fig.7 DC current gain vs. output
−200µ
current
OUTPUT CURRENT : I
−500µ
−1m
Ta=100˚C
Rev.C
−2m
−40˚C
25˚C
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m
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