MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 122

• Manufacturer Part Number: MT47H32M16HR-3 IT:F TR
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-3 IT:F TR

• Density: 512 Mb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 250mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 75: PRECHARGE Command-to-Power-Down Entry
Figure 76: LOAD MODE Command-to-Power-Down Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Notes:
Note:
Command
Command
Address
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
2. All banks must be in the precharged state and
3. The earliest precharge power-down entry is at T3, which is after
CK#
CKE
CK#
A10
CKE
CK
PRECHARGE command. Precharge power-down entry occurs prior to
isfied.
CK
Valid
T0
Valid
T0
t RP 2
Valid 1
LM
T1
Single bank
Valid
All banks
122
PRE
T1
vs
1 x
t MRD
t
CK
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T2
Power-down 1
512Mb: x4, x8, x16 DDR2 SDRAM
entry
NOP
T2
t
Power-down 3
RP met prior to issuing LM command.
entry
NOP
T3
t
CKE (MIN)
T3
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
t CKE (MIN)
Don’t Care
t
MRD is satisfied.
T4
t
RP (MIN) being sat-
Don’t Care
t
CK after the