MT48LC4M16A2P-75:G Micron Technology Inc, MT48LC4M16A2P-75:G Datasheet - Page 38

• Manufacturer Part Number: MT48LC4M16A2P-75:G
• Description: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC4M16A2P-75:G

• Density: 64 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Organization: 4Mx16
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 30:
Figure 31:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
READ With Auto Precharge Interrupted by a WRITE
WRITE With Auto Precharge Interrupted by a READ
Notes:
Notes:
1. DQM is HIGH at T2 to prevent D
1. DQM is LOW.
Internal
States
Internal
States
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
DQM
CLK
CLK
DQ
DQ
1
Active
Page
READ - AP
BANK n,
BANK n
Page Active
COL a
T0
T0
NOP
READ with Burst of 4
CAS Latency = 3 (BANK n)
WRITE - AP
BANK n,
Page Active
Page Active
BANK n
COL a
T1
NOP
T1
D
a
IN
38
WRITE with Burst of 4
OUT
T2
T2
a +1 from contending with D
a + 1
NOP
NOP
D
IN
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BANK m,
READ - AP
T3
T3
COL d
BANK m
D
NOP
OUT
a
Interrupt Burst, Write-Back
t
CAS Latency = 3 (BANK m)
WR - BANK n
READ with Burst of 4
BANK m,
WRITE - AP
TRANSITIONING DATA
COL d
TRANSITIONING DATA
BANK m
T4
T4
D
NOP
d
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
64Mb: x4, x8, x16 SDRAM
T5
T5
d + 1
NOP
D
NOP
IN
Precharge
t
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RP - BANK n
t
IN
RP - BANK n
d at T4.
T6
T6
d + 2
NOP
D
D
NOP
IN
OUT
d
DON’T CARE
Commands
DON’T CARE
T7
t WR - BANK m
T7
d + 3
d + 1
NOP
D
D
NOP
IN
t RP - BANK m
OUT
Write-Back
Idle