MT48LC4M32LFF5-8 IT:G TR Micron Technology Inc, MT48LC4M32LFF5-8 IT:G TR Datasheet - Page 32
![DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA T/R](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48LC4M32LFF5-8 IT:G TR
Manufacturer Part Number
MT48LC4M32LFF5-8 IT:G TR
Description
DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48LC8M16LFB4-75MG_TR.pdf
(80 pages)
Specifications of MT48LC4M32LFF5-8 IT:G TR
Density
128 Mb
Maximum Clock Rate
125 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
19|8|7 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (4Mx32)
Speed
125MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
90-VFBGA
Organization
4Mx32
Address Bus
14b
Access Time (max)
19/8/7ns
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE
command to the same bank (provided that auto precharge was not activated), and a full-
page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last
desired data element is valid, where x = CL - 1. This is shown in Figure 18 on page 33 for
each possible CL; data element n + 3 is either the last of a burst of four or the last desired
of a longer burst. Following the PRECHARGE command, a subsequent command to the
same bank cannot be issued until
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
32
t
RP is met. Note that part of the row precharge time is
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile SDRAM
©2001 Micron Technology, Inc. All rights reserved.
READs