MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 110

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Table 29: AC Characteristics: Normal Operation (1.8V) (Continued)
Note 1 applies to all
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Parameter
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Notes:
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
sampled and not 100% tested.
be busy for a maximum of 1ms. Thereafter, the device is busy for a maximum of 5µs.
Electrical Specifications – AC Characteristics and Operating
Symbol
t
t
RLOH
t
WHR
t
t
RHZ
t
t
RST
WB
RP
RR
110
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
12
20
80
2Gb: x8, x16 NAND Flash Memory
3
–
–
–
5/10/500
Max
100
65
–
–
–
–
© 2009 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
µs
ns
ns
Conditions
Notes
2
3