MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 88
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MT29F2G16ABBEAH4-IT:E
Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G16ABBEAH4-ITE.pdf
(125 pages)
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OTP DATA READ (00h-30h)
Figure 66: OTP DATA READ
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
00h
Note:
add 1
Col
To read data from the OTP area, set the device to OTP operation mode, then issue the
PAGE READ (00h-30h) command. Data can be read from OTP pages within the OTP
area whether the area is protected or not.
To use the PAGE READ command for reading data from the OTP area, issue the 00h
command, and then issue five address cycles: for the first two cycles, the column ad-
dress; and for the remaining address cycles, select a page in the range of 02h-00h-00h
through 1Fh-00h-00h. Lastly, issue the 30h command. The PAGE READ CACHE MODE
command is not supported on OTP pages.
R/B# goes LOW (
READ STATUS (70h) command is the only valid command for reading status in OTP
operation mode. Bit 5 of the status register reflects the state of R/B# (see Status Opera-
tions).
Normal READ operation timings apply to OTP read accesses. Additional pages within
the OTP area can be selected by repeating the OTP DATA READ command.
The PAGE READ command is compatible with the RANDOM DATA OUTPUT (05h-E0h)
command.
Only data on the current page can be read. Pulsing RE# outputs data sequentially.
1. The OTP page must be within the 02h–1Fh range.
add 2
Col
OTP address
page
OTP
1
t
R) while the data is moved from the OTP page to the data register. The
00h
00h
88
One-Time Programmable (OTP) Operations
30h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
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© 2009 Micron Technology, Inc. All rights reserved.
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