MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 111

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Electrical Specifications – Program/Erase Characteristics
Table 30: Program/Erase Characteristics
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Parameter
Number of partial-page programs
BLOCK ERASE operation time
Busy time for PROGRAM CACHE operation
Cache read busy time
Busy time for SET FEATURES and GET FEATURES operations
Busy time for OTP DATA PROGRAM operation if OTP is protec-
ted
Busy time for PROGRAM/ERASE on locked blocks
PROGRAM PAGE operation time, internal ECC disabled
PROGRAM PAGE operation time, internal ECC enabled
Data transfer from Flash array to data register, internal ECC
disabled
Data transfer from Flash array to data register, internal ECC
enabled
Busy time for OTP DATA PROGRAM operation if OTP is protec-
ted, internal ECC enabled
Busy time for TWO-PLANE PROGRAM PAGE or TWO-PLANE
BLOCK ERASE operation
Notes:
1. Four total partial-page programs to the same page. If ECC is enabled, then the device is
2.
3. Parameters are with internal ECC enabled.
4. Typical is nominal voltage and room temperature.
5. Typical
6. Data transfer from Flash array to data register with internal ECC disabled.
7. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
8. Typical program time is defined as the time within which more than 50% of the pages
limited to one partial-page program per ECC user area, not exceeding four partial-page
programs per page.
t
are programmed at nominal voltage and room temperature.
CBSY MAX time depends on timing between internal program completion and data-in.
Electrical Specifications – Program/Erase Characteristics
t
R_ECC is under typical process corner, nominal voltage, and at room temperature.
111
t
t
PROG_ECC
OBSY_ECC
Symbol
t
t
t
t
t
RCBSY
t
t
t
t
R_ECC
PROG
OBSY
DBSY
NOP
CBSY
FEAT
BERS
LBSY
t
R
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Typ
200
220
0.7
0.5
45
–
3
3
–
–
–
–
–
Max
600
600
600
25
30
25
70
50
© 2009 Micron Technology, Inc. All rights reserved.
4
3
1
3
1
cycles
Unit
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Notes
3, 8
6, 7
3, 5
1
2
8