PUMB30,115 NXP Semiconductors, PUMB30,115 Datasheet - Page 2

TRANS PNP/PNP W/RES 50V SOT-363

PUMB30,115

Manufacturer Part Number
PUMB30,115
Description
TRANS PNP/PNP W/RES 50V SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB30,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059933115
PUMB30 T/R
PUMB30 T/R
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PEMB30_PUMB30_2
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
4
5
6
Type number
PEMB30
PUMB30
Type number
PEMB30
PUMB30
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
Package
Name
-
SC-88
Rev. 02 — 2 September 2009
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Marking code
2T
*B2
Simplified outline
PEMB30; PUMB30
6
1
5
2
[1]
001aab555
4
3
Symbol
© NXP B.V. 2009. All rights reserved.
TR1
6
1
R1
Version
SOT666
SOT363
2
5
006aaa268
R1
TR2
4
3
2 of 10

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