NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet

NSBA114EDXV6T1G

Manufacturer Part Number

NSBA114EDXV6T1G

Description

TRANS BRT PNP DUAL 50V SOT-563

Manufacturer

ON Semiconductor

Datasheet

1.NSBA123JDXV6T1G.pdf (11 pages)

Specifications of NSBA114EDXV6T1G

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

10K

Resistor - Emitter Base (r2) (ohms)

10K

Dc Current Gain (hfe) (min) @ Ic, Vce

35 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Other names

NSBA114EDXV6T1G
NSBA114EDXV6T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSBA114EDXV6T1G

Manufacturer:

ON Semiconductor

Quantity:

3 050

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSBA114EDXV6T1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 11
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NSBA114EDXV6T1,

NSBA114EDXV6T5 SERIES

Dual Bias Resistor

Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBA114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low−power surface mount applications where board space is

at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

April, 2006 − Rev. 6

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation @ T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Total Device Dissipation @ T

Derate above 25°C (Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Junction and Storage Temperature

Range

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These are Pb−Free Devices

= 25°C unless otherwise noted, common for Q

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

Preferred Devices

= 25°C

Symbol

, T

CBO

CEO

qJA

stg

and Q

−55 to

Value

+150

−100

Max

)

−50

357

350

500

250

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

°C

**This package is inherently Pb−Free.

NSBA1xxxDXV6T1

NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel

NSBA1xxxDXV6T5

NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel

†For information on tape and reel specifications,

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

ORDERING INFORMATION

(3)

(4)

xx = Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code

= Pb−Free Package

(Refer to page 2)

SOT−563* 4000/Tape & Reel

SOT−563* 8000/Tape & Reel

xx M G

Package

(5)

Publication Order Number:

(2)

CASE 463A

SOT−563

PLASTIC

STYLE 1

NSBA114EDXV6/D

Shipping

(1)

(6)

†

Related parts for NSBA114EDXV6T1G

NSBA114EDXV6T1G Summary of contents

Page 1

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base ...

Page 2

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES DEVICE MARKING AND RESISTOR VALUES Device* NSBA114EDXV6T1 / T5 NSBA124EDXV6T1 / T5 NSBA144EDXV6T1 / T5 NSBA114YDXV6T1 / T5 NSBA114TDXV6T1 / T5 (Note 2) NSBA143TDXV6T1 / T5 (Note 2) NSBA113EDXV6T1 / T5 (Note 2) NSBA123EDXV6T1 / T5 (Note ...

Page 3

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ELECTRICAL CHARACTERISTICS (T Characteristic ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (V = − −5.0 mA Output Voltage (on −5 −2 1.0 kW) ...

Page 4

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ALL NSBA114EDXV6T1 SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1000 ...

Page 5

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 ...

Page 7

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 8

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 23. DC ...

Page 9

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 24. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 10

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 ...

Page 11

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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