NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 5

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

0.01
0.1
10
1
4
3
2
0
1
0
0
I
C
/I
B
= 10
10
Figure 9. Output Capacitance
V
Figure 7. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1
20
20
T
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CE(sat)
A
= −25°C
100
0.1
10
1
0
Figure 11. Input Voltage versus Output Current
versus I
30
V
O
= 0.2 V
10
C
40
40
f = 1 MHz
l
T
E
A
I
= 0 V
C
= 25°C
25°C
75°C
, COLLECTOR CURRENT (mA)
T
http://onsemi.com
A
= −25°C
50
20
50
75°C
5
0.001
1000
100
0.01
10
100
0.1
30
10
25°C
1
1
0
Figure 10. Output Current versus Input Voltage
1
75°C
40
2
Figure 8. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
3
in
T
, INPUT VOLTAGE (VOLTS)
50
A
= −25°C
4
10
5
6
7
T
A
= 75°C
8
V
CE
V
O
= 10 V
= 5 V
−25°C
9
25°C
100
10