NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 7

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
2
I
C
/I
B
4
= 10
Figure 19. Output Capacitance
V
6
R
Figure 17. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1
10
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
15 20
CE(sat)
0.1
10
40
1
0
Figure 21. Input Voltage versus Output Current
25 30
V
versus I
75°C
T
O
A
= 0.2 V
= −25°C
f = 1 MHz
l
T
E
10
A
35 40
60
= 0 V
= 25°C
C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
75°C
45 50
20
80
7
T
A
30
100
180
160
140
120
100
80
60
40
20
10
= −25°C
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
25°C
CE
2
= 10 V
40
4
2
6
Figure 18. DC Current Gain
I
C
V
8
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
−25°C
−25°C
6
25°C
V
O
= 5 V
T
A
= 75°C
8
25°C
10
100