MMBT3906,215 NXP Semiconductors, MMBT3906,215 Datasheet - Page 2

TRANS PNP 40V 200MA SOT23

MMBT3906,215

Manufacturer Part Number
MMBT3906,215
Description
TRANS PNP 40V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBT3906,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4511-2
933864370215
MMBT3906 T/R
MMBT3906 T/R
NXP Semiconductors
FEATURES
• Collector current capability I
• Collector-emitter voltage V
APPLICATIONS
• General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18
MMBT3906
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP switching transistor
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
CEO
C
= −200 mA
= −40 V.
MARKING CODE
7B∗
(1)
open emitter
open base
open collector
T
amb
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
SYMBOL
C
≤ 25 °C; note 1
CEO
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
base
emitter
collector
1
PARAMETER
3
−65
−65
MIN.
DESCRIPTION
2
MAM256
−40
−40
−6
−200
−200
−100
250
+150
150
+150
Product data sheet
MMBT3906
MAX.
1
−40
−200
MAX.
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
V
mA
UNIT

Related parts for MMBT3906,215