MMBT3906,215 NXP Semiconductors, MMBT3906,215 Datasheet - Page 4

• Manufacturer Part Number: MMBT3906,215
• Description: TRANS PNP 40V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBT3906,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4511-2; 933864370215; MMBT3906 T/R; MMBT3906 T/R

NXP Semiconductors
2003 Mar 18
handbook, halfpage
handbook, halfpage
PNP switching transistor
V
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
Fig.4
−1200
−1000
CE
CE
(mV)
V BE
−800
−600
−400
−200
h FE
600
400
200
= −1 V.
= −1 V.
−10
amb
amb
amb
amb
amb
amb
0
−10
Fig.2 DC current gain; typical values.
−1
= 150 °C.
= 25 °C.
= −55 °C.
= −55 °C.
= 25 °C.
= 150 °C.
−1
Base-emitter voltage as a function of
collector current.
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
I C (mA)
I C (mA)
MHC459
MHC461
−10
−10
3
3
4
handbook, halfpage
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
V BEsat
C
amb
−1200
−1000
/I
(mA)
(mV)
−250
−200
−150
−100
−800
−600
−400
−200
B
I C
−50
= 10.
B
B
B
B
= 25 °C.
amb
amb
amb
0
−10
= −1.5 mA.
= −1.35 mA.
= −1.2 mA.
= −1.05 mA.
0
= −55 °C.
= 25 °C.
= 150 °C.
Collector current as a function of
collector-emitter voltage.
−1
Base-emitter saturation voltage as a
function of collector current.
−2
−1
(5) I
(6) I
(7) I
(8) I
−4
B
B
B
B
= −0.9 mA.
= −0.75 mA.
= −0.6 mA.
= −0.45 mA.
−10
(1)
(2)
(3)
−6
(3)
−10
MMBT3906
(2)
Product data sheet
(9) I
(10) I
−8
2
I C (mA)
(10)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
V CE (V)
MHC460
B
B
MHC462
= −0.3 mA.
= −0.15 mA.
−10
−10
3