BC848B,215 NXP Semiconductors, BC848B,215 Datasheet - Page 3

• Manufacturer Part Number: BC848B,215
• Description: TRANSISTOR NPN 30V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC848B,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4868-2; 933589630215; BC848B T/R; BC848B T/R; BC848B,215

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC848_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT23
SOT323
SOT23
SOT323
Rev. 07 — 17 November 2009
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
30 V, 100 mA NPN general-purpose transistors
amb
≤ 1 ms
≤ 1 ms
≤ 25 °C
[1]
[1]
-
-
Min
Min
-
-
-
-
-
-
-
-
-
−65
−65
BC848 series
Typ
-
-
Max
30
30
5
200
200
250
200
150
+150
+150
100
© NXP B.V. 2009. All rights reserved.
Max
500
625
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
Unit
K/W
K/W
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