PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS5540Z,115
• Description: TRANS PNP 40V 5A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 250
• Frequency (max): 120MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4172-2; 934055496115; PBSS5540Z T/R; PBSS5540Z T/R

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
• MOSFET driver applications.
DESCRIPTION
PNP low V
NPN complement: PBSS4540Z.
MARKING
2001 Sep 21
PBSS5540Z
generation.
drivers)
40 V low V
TYPE NUMBER
CEsat
transistor in a SOT223 plastic package.
CEsat
PNP transistor
MARKING CODE
PB5540
2
QUICK REFERENCE DATA
PINNING
V
I
I
R
handbook, halfpage
SYMBOL
C
CM
CEO
CEsat
PIN
1
2
3
4
Fig.1 Simplified outline (SOT223) and symbol.
Top view
emitter-collector voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
collector
emitter
collector
1
PARAMETER
2
4
3
DESCRIPTION
MAM288
PBSS5540Z
Product data sheet
1
−40
−5
−10
<80
MAX
2, 4
3
V
A
A
mΩ
UNIT