PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS5540Z,115
• Description: TRANS PNP 40V 5A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 250
• Frequency (max): 120MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4172-2; 934055496115; PBSS5540Z T/R; PBSS5540Z T/R

NXP Semiconductors
2001 Sep 21
handbook, halfpage
handbook, halfpage
40 V low V
V
(1) T
(2) T
(3) T
Fig.2
V CEsat
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
1000
B
−10
−10
800
600
400
200
−10
= −2 V.
= 20.
−10
−1
amb
amb
amb
amb
amb
amb
0
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
−10
CEsat
(1)
(2)
(3)
−10
PNP transistor
−10
2
(2)
−10
(1)
(3)
2
−10
−10
3
I C (mA)
3
I C (mA)
MGU391
MGU395
−10
−10
4
4
5
handbook, halfpage
handbook, halfpage
V
(1) T
(2) T
(3) T
Fig.3
V BEsat
I
(1) T
(2) T
(3) T
Fig.5
C
CE
/I
(V)
V BE
−1.2
−0.8
−0.4
B
−1.2
(V)
−0.8
−0.4
= −2 V.
= 20.
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
−10
−10
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
2
2
PBSS5540Z
Product data sheet
−10
−10
I C (mA)
I C (mA)
3
3
MGU394
MGU393
−10
−10
4
4