2N6388 STMicroelectronics, 2N6388 Datasheet - Page 2

• Manufacturer Part Number: 2N6388
• Description: TRANS DARL NPN 80V 10A TO-220
• Manufacturer: STMicroelectronics
• Type: High Current, Powerr

Specifications of 2N6388

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3V @ 100mA, 10A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 3V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 10 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Current, Gain: 100
• Current, Input: 0.25 A
• Current, Output: 10 A
• Package Type: TO-220
• Polarity: NPN
• Power Dissipation: 65 W
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 80 V
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 65W
• Dc Collector Current: 10A
• Dc Current Gain Hfe: 1000
• No. Of Pins: 3
• Collector Current @ Hfe: 3A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2562-5

2N6388
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
V
V
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
Pulsed: Pulse duration = 100ms non repetitive pulse.
CEO(sus)
CER(sus)
CEV(sus)
CE(sat)
C
I
V
thj-case
h
I
I
I
s/b
V
E
CEO
CEV
EBO
h
BE
FE
CBO
F
s/b
fe
Thermal Resistance Junction-case
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Small Signal Current
Gain
Parallel-diode Forward
Voltage
Collector Base
Capacitance
Second Breakdown
Collector Current
Second Breakdown
Energy
C
B
= 0)
= 0)
Parameter
B
BE
= 0)
= -1.5V)
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
V
L = 12 mH
V
C
C
C
C
C
C
C
C
C
C
C
F
E
CE
CE
CE
EB
CE
BE
= 10 A
= 0
= 200 mA
= 200 mA
= 200 mA
= 5 A
= 10 A
= 5 A
= 10 A
= 5 A
= 10 A
= 1 A
= 1 A
= 5 V
= -1.5 V
= 80 V
= 80 V
= 80 V
= 25 V
case
V
= 25
Test Conditions
CB
V
V
CE
CE
= 10 V
o
I
R
C unless otherwise specified)
C
= 10 V
= 10 V
BE
V
V
V
V
= 4.5 A
I
I
R
V
B
B
CE
CE
CE
CE
= 100
BE
BE
= 10 mA
= 100 mA
T
= 3 V
= 3 V
= 3 V
= 3 V
c
= -1.5V
= 100
= 125
f = 1MHz
f = 1MHz
f = 1KHz
Max
o
C
1000
1000
Min.
120
100
2.6
80
80
80
20
Typ.
1.92
20000
Max.
200
0.3
2.8
4.5
3
1
5
2
3
4
o
Unit
mA
mA
mA
mA
C/W
mJ
pF
V
V
V
V
V
V
V
V
A