MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 10
MMBT3904WT1G
Manufacturer Part Number
MMBT3904WT1G
Description
TRANS GP SS NPN 40V SOT323
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of MMBT3904WT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SC-70 (SOT-323)
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904WT1GOS
MMBT3904WT1GOS
MMBT3904WT1GOSTR
MMBT3904WT1GOS
MMBT3904WT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON Semiconductor
Quantity:
800
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT3904WT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1.0
0.8
0.6
0.4
0.2
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.01
0
Figure 34. Collector Emitter Saturation Voltage
I
C
0.001
= 1.0 mA
I
C
/I
B
= 10
0.02
I
C
, COLLECTOR CURRENT (A)
vs. Collector Current
MMBT3906WT1
0.03
0.01
0.05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25°C
0.0001
−55°C
25°C
150°C
0.07
Figure 36. Base Emitter Voltage vs. Collector
V
150°C
CE
0.1
Figure 33. Collector Saturation Region
10 mA
0.1
= 1 V
−55°C
0.001
I
C
, COLLECTOR CURRENT (A)
http://onsemi.com
MMBT3906WT1
I
B
, BASE CURRENT (mA)
0.2
Current
0.01
1
10
0.3
30 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0001
0.5
Figure 35. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
0.1
I
0.7
C
/I
B
= 10
0.001
1.0
I
C
, COLLECTOR CURRENT (A)
Collector Current
1
2.0
0.01
3.0
100 mA
5.0
0.1
T
J
= 25°C
7.0
10
1