MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 8
MMBT3904WT1G
Manufacturer Part Number
MMBT3904WT1G
Description
TRANS GP SS NPN 40V SOT323
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of MMBT3904WT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SC-70 (SOT-323)
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904WT1GOS
MMBT3904WT1GOS
MMBT3904WT1GOSTR
MMBT3904WT1GOS
MMBT3904WT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON Semiconductor
Quantity:
800
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT3904WT1G
Manufacturer:
ON/安森美
Quantity:
20 000
+10.6 V
500
300
200
100
5.0
4.0
3.0
2.0
1.0
70
50
30
20
10
7
5
0
1.0
0.1
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
0.2
C
2.0 3.0
= 1.0 mA
< 1 ns
Figure 22. Delay and Rise Time
0.4
DUTY CYCLE = 2%
Figure 24. Turn −On Time
I
Equivalent Test Circuit
C
SOURCE RESISTANCE = 200 W
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
300 ns
= 0.5 mA
1.0
MMBT3906WT1
f, FREQUENCY (kHz)
Figure 26.
10
2.0
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
10 k
t
d
@ V
4.0
SOURCE RESISTANCE = 2.0 k
I
C
20
OB
= 50 mA
TYPICAL TRANSIENT CHARACTERISTICS
(V
= 0 V
t
30
r
CE
@ V
10
* Total shunt capacitance of test jig and connectors
= −5.0 Vdc, T
CC
50
MMBT3906WT1
3 V
NOISE FIGURE VARIATIONS
20
= 3.0 V
70
I
C
275
/I
C
100
40
B
S
= 10
http://onsemi.com
< 4 pF*
15 V
MMBT3906WT1
2.0 V
40 V
A
DUTY CYCLE = 2%
200
100
= 25°C, Bandwidth = 1.0 Hz)
10 < t
T
T
J
J
8
= 25°C
= 125°C
1
< 500 ms
500
300
200
100
70
50
30
20
10
8.0
6.0
4.0
2.0
0
12
10
7
5
0
1.0
0.1
+ 9.1 V
f = 1.0 kHz
0.2
t
1
2.0 3.0
0.4
Figure 23. Storage and Fall Time
10.9 V
I
C
R
, COLLECTOR CURRENT (mA)
5.0 7.0
Figure 25. Fall Time
S
< 1 ns
, SOURCE RESISTANCE (kW)
Equivalent Test Circuit
1.0
MMBT3906WT1
I
I
Figure 27.
C
C
10
2.0
/I
= 0.5 mA
I
B
C
= 10
= 1.0 mA
1N916
10 k
4.0
I
C
20
/I
B
= 20
30
10
MMBT3906WT1
50
20
3 V
V
I
B1
70
CC
I
= I
C
I
C
= 40 V
100
275
40
= 100 mA
B2
= 50 mA
C
S
< 4 pF*
200
100