MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 4
MMBT3904WT1G
Manufacturer Part Number
MMBT3904WT1G
Description
TRANS GP SS NPN 40V SOT323
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of MMBT3904WT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SC-70 (SOT-323)
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904WT1GOS
MMBT3904WT1GOS
MMBT3904WT1GOSTR
MMBT3904WT1GOS
MMBT3904WT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON Semiconductor
Quantity:
800
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT3904WT1G
Manufacturer:
ON/安森美
Quantity:
20 000
500
300
200
100
500
300
200
100
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
SOURCE RESISTANCE = 500 W
I
I
C
C
MMBT3904WT1
MMBT3904WT1
/I
= 100 mA
0.2
B
= 20
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
SOURCE RESISTANCE = 200 W
I
2.0 3.0
C
2.0 3.0
= 1.0 mA
0.4
I
Figure 3. Turn −On Time
SOURCE RESISTANCE = 200 W
I
Figure 7. Noise Figure
I
C
I
Figure 5. Storage Time
C
C
C
/I
5.0 7.0
, COLLECTOR CURRENT (mA)
5.0 7.0
, COLLECTOR CURRENT (mA)
= 0.5 mA
B
1.0
= 10
f, FREQUENCY (kHz)
2.0
SOURCE RESISTANCE = 1.0 k
I
10
10
C
= 50 mA
t
d
@ V
4.0
(V
20
20
OB
TYPICAL TRANSIENT CHARACTERISTICS
CE
= 0 V
30
30
10
= 5.0 Vdc, T
MMBT3904WT1
t
50
50
I
r
C
20
@ V
/I
t′
I
B
B1
70
70
s
= 20
I
I
CC
C
= t
C
= I
/I
40
/I
100
100
2.0 V
B
B
s
= 3.0 V
B2
-
http://onsemi.com
= 10
= 10
MMBT3904WT1
15 V
40 V
1
/
8
A
t
100
f
= 25°C, Bandwidth = 1.0 Hz)
200
200
T
T
J
J
4
= 25°C
= 125°C
500
300
200
100
500
300
200
100
14
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
f = 1.0 kHz
0.2
2.0 3.0
MMBT3904WT1
2.0 3.0
MMBT3904WT1
I
0.4
C
= 0.5 mA
R
S
, SOURCE RESISTANCE (k OHMS)
I
I
Figure 8. Noise Figure
C
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
I
Figure 4. Rise Time
= 1.0 mA
C
Figure 6. Fall Time
1.0
/I
B
= 10
2.0
10
10
I
C
4.0
/I
B
20
20
= 20
30
30
10
I
C
MMBT3904WT1
50
50
= 100 mA
20
V
I
V
I
70
70
I
B1
C
C
CC
CC
/I
= 50 mA
B
= I
100
100
40
= 40 V
= 40 V
= 10
B2
100
200
200