MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 2
MMBT6427LT1G
Manufacturer Part Number
MMBT6427LT1G
Description
TRANS SS DARL NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of MMBT6427LT1G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Capacitance, Input
15 pF
Current, Gain
140000
Current, Output
500 mADC
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
556
Voltage, Collector To Emitter, Saturation
1.5 VDC
Voltage, Input
12 VDC
Voltage, Output
40 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6427LT1GOS
MMBT6427LT1GOS
MMBT6427LT1GOSTR
MMBT6427LT1GOS
MMBT6427LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBT6427LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Output Capacitance
Input Capacitance
Current Gain − High Frequency
Noise Figure
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, V
= 100 mAdc, I
= 10 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 500 mAdc, V
= 50 mAdc, I
= 500 mAdc, I
= 500 mAdc, I
= 50 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 Vdc, I
= 0.5 Vdc, I
= 25 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
C
C
B
B
E
E
E
C
BE
CE
CE
CE
= 0)
B
B
CE
= 0.5 mAdc)
= 0)
= 0)
= 0)
CE
CE
= 0, f = 1.0 MHz)
= 0)
= 0, f = 1.0 MHz)
= 0.5 mAdc)
= 0.5 mAdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, R
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
S
= 100 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
V
V
V
V
Symbol
V
V
CE(sat)
(BR)CEO
(BR)CBO
(BR)EBO
I
I
I
BE(sat)
C
BE(on)
C
|h
h
CES
CBO
EBO
NF
obo
FE
ibo
fe
|
(3)
10,000
20,000
14,000
Min
1.3
40
40
12
−
−
−
−
−
−
−
−
−
−
100,000
200,000
140,000
Max
1.75
1.0
1.2
1.5
2.0
7.0
50
50
15
10
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−